Three dimension integrated circuits employing thin film transistors
AssigneeTacho Holdings, LLC
InventorsJames John Lupino, Tommy Allen Agan
Life of this patent
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Abstract
An integrated circuit which enables lower cost yet provides superior performance compared to standard silicon integrated circuits by utilizing thin film transistors (TFTs) fabricated in BEOL. Improved memory circuits are enabled by utilizing TFTs to improve the density and access in a three dimensional circuit design which minimizes die area. Improved I/O is enabled by eliminating the area on the surface of the semi-conductor dedicated to I/O and allowing many times the number of I/O available. Improved speed and lower power are also enabled by the shortened metal routing lines and reducing leakage.
Claims17
An integrated circuit device comprising:
- a substrate;
- core circuitry manufactured on the substrate, the core circuitry comprising a plurality of electrically-interconnected crystalline transistors;
- and
- Input/Output (I/O) circuitry located directly above and electrically coupled to the core circuitry via electrical interconnects therebetween, the I/O circuitry comprising a plurality of Thin Film Transistors (TFTs) and configured to receive and/or provide electrical signal(s) from and/or to one or more devices conductively coupled to and external to the integrated circuit device, respectively,
- wherein the plurality of TFTs consists of structures manufacturable at temperatures less than or equal to 450° C.
Dependencies are inferred from the claim text.