Conductive components and memory assemblies

A NAND memory assembly, comprising:

• a source structure supported by a semiconductor substrate;
• CMOS circuitry between the source structure and the semiconductor substrate;
• vertically-stacked memory cells over the source structure, and coupled with conductive material of vertically-stacked conductive levels;
• channel material extending along the memory cells and being electrically coupled with the source structure;
• and
• wherein the source structure includes:
• a first metal-containing material;
• the first metal-containing material consisting essentially of metal;
• a second metal-containing material over the first metal-containing material;
• the second metal-containing material comprising metal and nitrogen;
• and
• a conductively-doped semiconductor material over the second metal-containing material.

An assembly, comprising:

• CMOS over a semiconductor substrate;
• a conductive component supported by the semiconductor substrate and being over the CMOS;
• the conductive component, comprising:
• a first metal-containing material which includes at least one of tungsten, tantalum and ruthenium;
• and which lacks nitrogen;
• a second metal-containing material over the first metal-containing material;
• the second metal-containing material including a common metal as the first metal-containing material, and in addition including nitrogen;
• a third metal-containing material over the second metal-containing material;
• the third metal-containing material including metal and nitrogen, and being compositionally different from the second metal-containing material;
• and
• one or more silicon-containing conductive materials over the third metal-containing material.

An assembly, comprising:

• CMOS over a semiconductor substrate;
• a conductive component supported by the semiconductor substrate and being over the CMOS;
• the conductive component, comprising:
• a first metal-containing material which includes at least one of tungsten, tantalum and ruthenium;
• and which lacks nitrogen;
• a second metal-containing material over the first metal-containing material;
• the second metal-containing material including a common metal as the first metal-containing material, and in addition including nitrogen;
• a third metal-containing material over the second metal-containing material;
• the third metal-containing material including metal and nitrogen, and being compositionally different from the second metal-containing material;
• and
• one or more silicon-containing conductive materials over the third metal-containing material;
• memory cells over the conductive component;
• and
• channel material extending along the memory cells and being electrically coupled with the conductive component.