Semiconductor memory device including stacked body with conductivity and insulating members and method for manufacturing the same

A semiconductor memory device, comprising:

• a first insulating film on a semiconductor substrate;
• a first wiring in the first insulating film;
• a first electrode film on the first insulating film;
• a stacked body on the first electrode film and comprising second insulating films and second electrode films alternately stacked along a first direction;
• a first insulating member penetrating the stacked body in the first direction to the first electrode film;
• a first semiconductor film covering an outer surface of the first insulating member and electrically connected to the first electrode film;
• a third insulating film covering an outer surface of the first semiconductor film;
• a first conductive member extending in the first direction and penetrating the stacked body and the first electrode film, the first conductive member being electrically connected to the first wiring;
• and
• a fourth insulating film covering an outer surface of the first conductive member, wherein
• the fourth insulating film and the third insulating film have a same film structure,
• the third insulating film includes:
• a first insulating layer in contact with the first semiconductor film;
• a second insulating layer covering an outer surface of the first insulating layer;
• and
• a third layer between the first insulating layer and the second insulating layer, the fourth insulating film includes:
• a fourth insulating layer;
• a fifth insulating layer covering an outer surface of the fourth insulating layer;
• and
• a sixth layer provided between the fourth insulating layer and the fifth insulating layer,
• the first insulating layer has the same composition as the fourth insulating layer,
• the second insulating layer has the same composition as the fifth insulating layer, and
• the third layer has the same composition as the sixth layer.