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US 10,475,801 B2Granted
Ferroelectric memory device and cross-point array apparatus including the same
AssigneeSK hynix Inc.
InventorSanghun Lee
Life of this patent
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Abstract
A ferroelectric memory device includes a first electrode layer disposed on a substrate, a first tunnel barrier layer disposed on the first electrode layer, a second electrode layer disposed on the first tunnel barrier layer, a second tunnel barrier layer disposed on the second electrode layer, and a third electrode layer disposed on the second tunnel barrier layer. Any one of the first and second tunnel barrier layers includes a ferroelectric material.
Claims9
A cross-point array apparatus comprising:
- a pillar-shaped structure, disposed in a region where a first conductive line and a second conductive line intersect, having a first tunnel barrier layer, an intermediate electrode layer and a second tunnel barrier layer,
- wherein any one of the first and second tunnel barrier layers comprises a ferroelectric material;
- and
- wherein a logic signal information is stored in a nonvolatile manner in the pillar-shaped structure according to an orientation of a remanent polarization of the ferroelectric material in the any one of the first and second tunnel barrier layers;
- wherein a first tunnel junction electrode layer is disposed between the first conductive line and the first tunnel barrier layer:
- and
- wherein a second tunnel junction electrode layer is disposed between the second conductive line and the second tunnel barrier layer.
4 more elements
Dependencies are inferred from the claim text.