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US 10,475,800 B2Granted
IC including standard cells and SRAM cells
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorJhon-Jhy Liaw
Life of this patent
Estimating the term…
Abstract
An IC is provided. The IC includes a plurality of P-type fin field-effect transistors (FinFETs). At least one first P-type FinFET includes a silicon germanium (SiGe) channel region. At least one second P-type FinFET includes a Si channel region. Source and drain regions of the plurality of P-type FinFETs include SiGe and a p-type impurity.
Claims20
An integrated circuit (IC), comprising:
- a plurality of standard cells, wherein P-type fin field-effect transistors (FinFETs) of the plurality of standard cells share a first semiconductor fin including silicon germanium (SiGe);
- and
- a plurality of SRAM cells, wherein P-type FinFETs of two adjacent SRAM cells share a second semiconductor fin including Si,
- wherein source and drain regions of the P-type FinFETs of the standard cells and the SRAM cells comprise SiGe and a p-type impurity,
- wherein a length of the second semiconductor fin is shorter than a length of the first semiconductor fin.
2 more elements
An integrated circuit (IC), comprising:
- a plurality of standard cells, wherein P-type fin field-effect transistors (FinFETs) of the plurality of standard cells share a first semiconductor fin including a first material, and N-type FinFETs of the plurality of standard cells share a second semiconductor fin including a second material that is different from the first material;
- and
- a plurality of SRAM cells, wherein P-type FinFETs of two adjacent SRAM cells share a third semiconductor fin including a third material different from the first material, and N-type FinFETs of the plurality of SRAM cells share a fourth semiconductor fin including the second material,
- wherein the first material comprises silicon germanium (SiGe),
- wherein a first length of the first semiconductor fin is equal to a second length of the second semiconductor fin, and a third length of the third semiconductor fin is shorter than a fourth length of the fourth semiconductor fin.
2 more elements
An integrated circuit (IC), comprising:
- a plurality of P-type fin field-effect transistors (FinFETs), comprising:
- at least one first P-type FinFET comprising a silicon germanium (SiGe) channel region;
- and
- at least one second P-type FinFET comprising a Si channel region, wherein source and drain regions of the plurality of P-type FinFETs comprise SiGe and a p-type impurity;
- at least one standard cell comprising the first P-type FinFET;
- and
- at least one SRAM memory cell comprising the second P-type FinFET.
4 more elements
Dependencies are inferred from the claim text.