Method of fabricating bit line
AssigneesUnited Microelectronics Corp., Fujian Jinhua Integrated Circuit Co., Ltd.
InventorsPin-Hong Chen, Yi-Wei Chen, Chih-Chieh Tsai, Tzu-Chieh Chen, Tsun-Min Cheng, Chi-Mao Hsu
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Abstract
A fabricating method of a semiconductive element includes providing a substrate, wherein an amorphous silicon layer covers the substrate. Then, a titanium nitride layer is provided to cover and contact the amorphous silicon layer. Later, a titanium layer is formed to cover the titanium nitride layer. Finally, a thermal process is performed to transform the titanium nitride layer into a nitrogen-containing titanium silicide layer.
Claims13
A fabricating method of a semiconductive element, comprising:
- providing a substrate, wherein an amorphous silicon layer covers the substrate;
- providing a titanium nitride layer covering and contacting the amorphous silicon layer;
- forming a titanium layer covering the titanium nitride layer;
- and
- performing a thermal process to transform the titanium nitride layer into a nitrogen-containing titanium silicide layer, wherein the nitrogen-containing titanium silicide layer comprises a second nitrogen concentration, the second nitrogen concentration changes in gradient, and the second nitrogen concentration decreases in a direction away from the amorphous silicon layer.
A fabricating method of a bit line, comprising:
- providing a chamber, wherein the chamber comprises:
- a titanium target disposed on a top wall of the chamber;
- a stage disposed on a bottom of the chamber;
- performing a burn-in process, wherein the burn-in process comprises:
- introducing nitrogen gas and inert gas into the chamber, and ionizing the nitrogen gas and the inert gas to form nitrogen ions and inert ions, wherein the nitrogen ions and inert ions bombard the titanium target to form a first titanium nitride layer on the top wall and the bottom of the chamber;
- after the burn-in process, providing a substrate on the stage, wherein a conductive silicon layer covers the substrate;
- after providing the substrate on the stage, performing a deposition process, wherein the deposition process comprises:
- introducing inert gas into the chamber, and ionizing the inert gas to form inert ions;
- bombarding the first titanium nitride layer by inert ions to form a second titanium nitride layer to contact the conductive silicon layer;
- and
- after forming the second titanium nitride layer, the inert ions bombarding the titanium target to deposit a titanium layer to cover the second titanium nitride layer;
- forming a conductive layer to cover the titanium layer;
- and
- performing a thermal process to react both the second titanium nitride layer and the titanium layer with the conductive silicon layer to form a nitrogen-containing titanium silicide/titanium silicide layer.
Dependencies are inferred from the claim text.