Dynamic random access memory and fabrication method thereof
AssigneesSemiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) Corporation
InventorsXi Lin, Yi Hua Shen
Life of this patent
Estimating the term…
Abstract
Dynamic random access memory (DRAM) and fabrication methods thereof are provided. An exemplary fabrication method includes providing a base substrate; forming an interlayer dielectric layer over the base substrate; forming an opening passing through the interlayer dielectric layer; and forming a memory structure, having a first conductive layer, a memory medium layer on the first conductive layer, and a second conductive layer on the memory medium layer, in the opening.
Claims14
A method for fabricating a dynamic random access memory (DRAM), comprising:
- providing a base substrate, the base substrate comprising a semiconductor substrate having a plurality of fins and an isolation structure between the plurality of the fins, the isolation structure being formed on the semiconductor substrate and covering portions of side surfaces the plurality of fins along a length direction of the fins;
- forming an interlayer dielectric layer over the base substrate, the interlayer dielectric layer covering top surfaces of the fins and the isolation structure;
- forming an opening passing through the interlayer dielectric layer and each of the plurality of fins, the opening extending to and exposing a top surface of a portion of the isolation structure;
- and
- forming a memory structure, having a first conductive layer, a memory medium layer on the first conductive layer, and a second conductive layer on the memory medium layer, in the opening.
Dependencies are inferred from the claim text.