Semiconductor device and method for fabricating the same
AssigneesUnited Microelectronics Corp., Fujian Jinhua Integrated Circuit Co., Ltd.
InventorsPo-Han Wu, Fu-Che Lee, Chien-Cheng Tsai, Tzu-Tsen Liu, Wen-Chieh Lu
Life of this patent
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Abstract
A method for fabricating semiconductor device includes the steps of: forming a first bit line structure on a substrate; forming a first spacer adjacent to the first bit line structure; forming an interlayer dielectric (ILD) layer adjacent to the first spacer; removing part of the ILD layer and part of the first spacer to expose a sidewall of the first bit line structure; and forming a first storage node contact isolation structure adjacent to the first bit line structure, wherein the first storage node contact isolation structure contacts the first bit line structure and the first spacer directly.
Claims14
A method for fabricating semiconductor device, comprising:
- forming a first bit line structure on a substrate;
- forming a first spacer adjacent to the first bit line structure;
- forming an interlayer dielectric (ILD) layer adjacent to the first spacer;
- removing part of the ILD layer and part of the first spacer to expose a sidewall of the first bit line structure;
- and
- forming a first storage node contact isolation structure adjacent to the first bit line structure, wherein the first storage node contact isolation structure contacts the first bit line structure and the first spacer directly.
A semiconductor device, comprising:
- a first bit line structure extending along a first direction on a substrate;
- a first spacer extending along the first direction adjacent to the first bit line structure;
- and
- a first storage node contact isolation structure extending along a second direction adjacent to the first bit line structure, wherein the first storage node contact isolation structure contacts the first bit line structure and the first spacer directly.
Dependencies are inferred from the claim text.