Power transistor device
AssigneeUBIQ Semiconductor Corp.
InventorChin-Fu Chen
Life of this patent
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Abstract
Provided is a power transistor device including a substrate structure, a first conductive layer, a second conductive layer and a third conductive layer. The substrate structure has a base portion and fin portions. The fin portions protrude from a surface of the base portion and extend along a first direction. The first conductive layer is disposed across the fin portions and extends along a second direction different from the first direction. The second conductive layer is disposed across the fin portions, is located at one side of the first conductive layer and extends along the second direction. The first spacer is disposed between and in physical contact with the first conductive layer and the second conductive layer.
Claims20
A power transistor device, comprising:
- a substrate structure, having a base portion and fin portions, wherein the fin portions protrude from a surface of the base portion and extend along a first direction;
- a first conductive layer, disposed across the fin portions and extending along a second direction different from the first direction;
- a second conductive layer, disposed across the same fin portions, located at one side of the first conductive layer and extending along the second direction;
- and
- a first spacer, disposed between and in physical contact with the first conductive layer and the second conductive layer.
A power transistor device, comprising:
- a substrate structure having first fin portions, second fin portions and third fin portions extending along a first direction, wherein the first fin portions are between and separated from the second fin portions and the third fin portions;
- a first conductive layer, disposed across the first fin portions;
- a second conductive layer and a third conductive layer, disposed across the first fin portions and at two sides of the first conductive layer;
- a fourth conductive layer, disposed between the first fin portions and the second fin portions;
- and
- a fifth conductive layer, disposed between the first fin portions and the third fin portions.
A power transistor device, comprising:
- a substrate structure having first trenches extending along a first direction, a second trench extending along a second direction different from the first direction, and a third trench extending along the second direction, wherein the substrate structure comprises a base portion and fin portions extending along the first direction and protruding from a surface of the base portion, and each fin portion is disposed between two adjacent first trenches and between the second trench and the third trench;
- a first conductive layer, disposed across the fin portions;
- a second conductive layer and a third conductive layer, disposed across the fin portions and located at two sides of the first conductive layer,
- wherein the substrate structure, the first conductive layer, the second conductive layer and the third conductive layer are separated from each other.
Dependencies are inferred from the claim text.