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US 10,475,790 B2Granted
Asymmetric gate pitch
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWei-Barn Chen, Chi-Cherng Jeng, Shiu-Ko Jangjian, Ting-Huang Kuo
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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWei-Barn Chen, Chi-Cherng Jeng, Shiu-Ko Jangjian, Ting-Huang Kuo
Estimating the term…
The present disclosure describes an exemplary asymmetric CPP layout for a semiconductor structure with a different gate pitch over the source and the drain regions to mitigate gate-to-gate parasitic capacitances over the drain region, thus improving cutoff frequency. For example, the semiconductor structure can include a fin on a substrate. The semiconductor structure can also include first and second gate structures formed on the fin and separated by a first space. The semiconductor structure can also include a third gate structure formed on the fin between the first and the second gate structures. The third gate structure can be separated from the first gate structure by a second pitch and separated from the second gate structure by a third pitch that is greater than the second pitch. The semiconductor structure further includes a source region formed between the first and third gate structures, and a drain region formed between the third and the second gate structures.
A semiconductor structure, comprising:
A semiconductor structure, comprising:
A structure, comprising:
Dependencies are inferred from the claim text.