Semiconductor device having first and second fin-type patterns and method of fabricating the same

A semiconductor device comprising:

• a first fin-type pattern comprising a first long side, wherein the first long side extends in a first direction, and a first short side, wherein the first short side extends in a second direction that is different from the first direction, and wherein the first fin-type pattern extends in the first direction;
• a second fin-type pattern arranged substantially parallel to the first fin-type pattern comprising a second long side, wherein the second long side extends in the first direction and is opposite to the first long side of the first fin-type pattern;
• and
• a first gate electrode intersecting the first fin-type pattern and the second fin-type pattern,
• wherein the first gate electrode extends in the second direction;
• wherein the second fin-type pattern comprises a protrusion portion that protrudes beyond the first short side of the first fin-type pattern in the first direction,
• wherein the first gate electrode overlaps with an end portion of the first fin-type pattern that comprises the first short side of the first fin-type pattern,
• wherein at least part of a first sidewall of the first fin-type pattern that defines the first short side of the first fin-type pattern is defined by a first trench having a first depth in a third direction perpendicular to the first and second directions, and
• wherein the first trench directly adjoins a second trench having a second depth in the third direction, which is greater than the first depth.