Asymmetric transient voltage suppressor device and methods for formation
AssigneeLittelfuse, Inc.
InventorJames Allan Peters
Life of this patent
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Abstract
A transient voltage suppression (TVS) device, may include: a substrate base formed in a substrate, the substrate base comprising a semiconductor of a first conductivity type; and an epitaxial layer, disposed on the substrate base, on a first side of the substrate, and comprising a semiconductor of a second conductivity type. The epitaxial layer may include: a first portion, the first portion having a first layer thickness; and a second portion, the second portion having a second layer thickness, less than the first layer thickness, wherein the first portion and the second portion are disposed on a first side of the substrate, and wherein the first portion is electrically isolated from the second portion.
Claims14
A transient voltage suppression (TVS) device, comprising:
- a substrate base formed in a substrate, the substrate base comprising a semiconductor of a first conductivity type;
- and
- an epitaxial layer, disposed directly on the substrate base, on a first side of the substrate, and comprising a semiconductor of a second conductivity type, the epitaxial layer further comprising:
- a first portion, extending from an interface between the substrate base and the first portion, the first portion having a first layer thickness;
- and
- a second portion, extending from the interface between the substrate base and the first portion, the second portion having a second layer thickness, less than the first layer thickness, wherein the first portion and the second portion are disposed on the first side of the substrate, and wherein the first portion is electrically isolated from the second portion.
A transient voltage suppression (TVS) device assembly, comprising:
- a TVS device, the TVS device comprising:
- a substrate base formed in a substrate, the substrate base comprising a semiconductor of a first conductivity type;
- an epitaxial layer, disposed directly on the substrate base, on a first side of the epitaxial layer comprising a semiconductor of a second conductivity type, the epitaxial layer further comprising:
- a first portion, extending from an interface between the substrate base and the first portion, the first portion having a first layer thickness;
- and
- a second portion, extending from the interface between the substrate base and the first portion, the second portion having a second layer thickness, less than the first layer thickness, wherein the second portion comprises a trench shape, wherein a plane defined by a first upper surface of the first portion is above a second upper surface of the second portion;
- and
- a leadframe, the leadframe being coupled to the TVS device, the leadframe comprising:
- a first part, the first part being connected to the first portion of the TVS device;
- and
- a second part, the second part being coupled to the second portion of the TVS device.
Dependencies are inferred from the claim text.