Semiconductor device

A semiconductor device, comprising:

• a first semiconductor region;
• a second semiconductor region of a first conductivity type provided inside the first semiconductor region;
• an anode region of the first conductivity type provided on the second semiconductor region;
• a cathode region of the first conductivity type provided on the second semiconductor region, a first conductivity-type impurity concentration being higher in the cathode region than in the anode region;
• an insulating film provided between the anode region and the cathode region and provided on the second semiconductor region, the insulating film having a corner on an anode region side, the corner being located deeper than an upper surface of the anode region;
• a third semiconductor region of a second conductivity type provided inside the second semiconductor region, the third semiconductor region covering the corner of the insulating film on the anode region side;
• a fifth semiconductor region of the second conductivity type provided on the third semiconductor region and being adjacent to the insulating film, a second conductivity-type impurity concentration of the fifth semiconductor region higher than a second conductivity-type impurity concentration of the third semiconductor region;
• a sixth semiconductor region of the first conductivity type provided on the second semiconductor region, the third semiconductor region and the sixth semiconductor region being separated from each other with stripe patterns;
• a first electrode contacting the anode region and the fifth semiconductor region;
• a second electrode contacting the cathode region;
• and
• a third electrode provided on the insulating film and positioned on a p-n junction between the second semiconductor region and the third semiconductor region.