Semiconductor structure with a resistor and a transistor and method for forming the same

A method for manufacturing a semiconductor structure, comprising:

• providing a substrate having a first conductivity type;
• forming a first well in the substrate, wherein the first well has a second conductivity type;
• forming a first doped region in the first well, wherein the first doped region has the second conductivity type;
• forming a second well in the substrate, wherein the second well has the first conductivity type;
• forming a second doped region in the second well, wherein the second doped region has the second conductivity type;
• forming a gate structure on the substrate, wherein the gate structure overlaps a portion of the first well and a portion of the second well;
• forming a first insulating layer on the substrate, wherein the first insulating layer is spaced apart from the gate structure;
• and
• forming a first conducting wire directly on the first insulating layer, wherein the first conducting wire comprises a first input terminal formed directly on the first insulating layer and configured to receive an input voltage and a first output terminal formed directly on the first insulating layer and electrically connected to the first doped region,
• wherein the first input terminal is a first end of the first conducting wire and the first output terminal is a second end of the first conducting wire,
• wherein the first doped region is disposed between the gate structure and the first insulating layer, and
• wherein an entirety of the first conducting wire is directly above the first well.