Method for producing a semiconductor component and a semiconductor component

A semiconductor component comprising:

• a light transmissive carrier;
• a semiconductor body disposed on the light transmissive carrier, the semiconductor body comprising a first semiconductor layer, a second semiconductor layer and an active region being arranged between the first semiconductor layer and the second semiconductor layer, wherein the semiconductor body comprises a first patterned main surface facing the light transmissive carrier and a second main surface facing away from the light transmissive carrier;
• a contact structure comprising a first contact area and a second contact area arranged on the second main surface and a via, wherein the second contact area is electrically connected to the second semiconductor layer, and wherein the via is electrically connected to the first contact area and extends from the second main surface throughout the second semiconductor layer and the active region into the first semiconductor layer;
• an insulating layer covering a vertical surface of the semiconductor body, wherein the insulating layer comprises a structured and mechanically broken tether in regions covering the light transmissive carrier, wherein the semiconductor component is free of a growth substrate, and wherein the light transmissive carrier is an interposer or a final board;
• and
• a connecting layer fixing the semiconductor body to the light transmissive carrier, wherein the structured and mechanically broken tether is arranged sideways from the semiconductor body and is embedded in the connecting layer.

A semiconductor component comprising:

• a light transmissive carrier;
• a semiconductor body disposed on the light transmissive carrier, the semiconductor body comprising a first semiconductor layer, a second semiconductor layer and an active region being arranged between the first semiconductor layer and the second semiconductor layer, wherein the semiconductor body comprises a first patterned main surface facing the light transmissive carrier and a second main surface facing away from the light transmissive carrier;
• a contact structure comprising a first contact area and a second contact area arranged on the second main surface and a via, wherein the second contact area is electrically connected to the second semiconductor layer, and wherein the via is electrically connected to the first contact area and extends from the second main surface throughout the second semiconductor layer and the active region into the first semiconductor layer;
• an insulating layer covering a vertical surface of the semiconductor body, wherein the insulating layer comprises a structured and mechanically broken tether in regions covering the light transmissive carrier, wherein the semiconductor component is free of a growth substrate, and wherein the light transmissive carrier is an interposer or a final board;
• and
• a connecting layer mechanically fixing the semiconductor body to the light transmissive carrier, wherein the structured and mechanically broken tether is embedded in the connecting layer, wherein the structured and mechanically broken tether is arranged sideways from the semiconductor body, and wherein the structured and mechanically broken tether is an additional lateral anchoring structure that enhances a mechanical stability of a connection between the light transmissive carrier and the semiconductor body.