Back to results
US 10,475,770 B2Granted
Semiconductor device having stacked dies and stacked pillars and method of manufacturing thereof
AssigneeAmkor Technology, Inc.
InventorsWon Geol Lee, Won Chul Do, Ji Hun Yi
Life of this patent
Estimating the term…
Abstract
Various aspects of this disclosure provide a semiconductor device and a method of manufacturing a semiconductor device. As a non-limiting example, various aspects of this disclosure provide a semiconductor device comprising a stacked die structure and a method of manufacturing thereof.
Claims20
A semiconductor device comprising:
- a first substrate having no active electronic devices and comprising:
- a first substrate top side;
- a first substrate bottom side;
- a first signal distribution layer;
- and
- a first dielectric layer;
- a first metal pillar on the first substrate top side;
- a first semiconductor die comprising:
- a first die bottom side comprising an active die side;
- a first die top side;
- and
- conductive bumps on the first die bottom side,
- where the conductive bumps are coupled directly to the first substrate top side;
- a second metal pillar above the first metal pillar, wherein a bottom end of the second metal pillar is connected to a top end of the first metal pillar;
- a second semiconductor die comprising:
- a second die top side comprising an active die side;
- and
- a second die bottom side coupled to the first die top side, such that there is no intervening substrate between the first and second semiconductor dies;
- a second substrate on a top end of the second metal pillar and on the second die top side;
- and
- encapsulating material between the first substrate and the second substrate, wherein the encapsulating material encapsulates at least a lateral side of each of the first metal pillar, the first semiconductor die, the second metal pillar and the second semiconductor die, and the encapsulating material contacts and covers the first dielectric layer of the first substrate.
18 more elements
A semiconductor device comprising:
- a first substrate;
- a first metal pillar plated on a top side of the first substrate;
- a first semiconductor die comprising:
- a top side facing away from the first substrate;
- and
- a bottom side facing the first substrate, and comprising pads that are connected to the top side of the first substrate with solder;
- a second metal pillar plated above the first metal pillar, wherein a bottom end of the second metal pillar is connected to a top end of the first metal pillar;
- a second semiconductor die comprising:
- a top side facing away from the first semiconductor die and comprising pads;
- and
- a bottom side coupled to the top side of the first semiconductor die, such that there is no intervening substrate between the first and second semiconductor dies;
- a second substrate comprising:
- a top side facing away from the second semiconductor die;
- and
- a bottom side facing the second semiconductor die and comprising a conductive layer directly connected to the pads of the second semiconductor die without solder;
- and
- encapsulating material between the first substrate and the second substrate, wherein the encapsulating material encapsulates at least lateral sides of the first metal pillar, the first semiconductor die, the second metal pillar and the second semiconductor die, and
- wherein a bottom surface of the encapsulating material is lower than a bottom end of the first metal pillar.
15 more elements
A method of manufacturing a semiconductor device, the fabricating method comprising:
- providing a first substrate having no active electronic devices and comprising:
- a first substrate top side;
- a first substrate bottom side;
- a first signal distribution layer;
- and
- a first dielectric layer;
- providing a first metal pillar on the first substrate top side;
- providing a first semiconductor die comprising:
- a first die bottom side comprising an active die side;
- a first die top side;
- and
- conductive bumps on the first die bottom side,
- where the conductive bumps are coupled directly to the first substrate top side;
- providing a second metal pillar above the first metal pillar, wherein a bottom end of the second metal pillar is connected to a top end of the first metal pillar;
- providing a second semiconductor die comprising:
- a second die top side comprising an active die side;
- and
- a second die bottom side coupled to the first side top side, such that there is no intervening substrate between the first and second semiconductor dies;
- providing a second substrate on a top end of the second metal pillar and on the second die top side;
- and
- providing an encapsulating material between the first substrate and the second substrate, wherein the encapsulating material encapsulates at least a lateral side of each of the first metal pillar, the first semiconductor die, the second metal pillar and the second semiconductor die, and the encapsulating material contacts and covers the first dielectric layer of the first substrate.
18 more elements
Dependencies are inferred from the claim text.