3DIC structure and method of manufacturing the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsSung-Feng Yeh, Hsien-Wei Chen, Ming-Fa Chen
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Abstract
A 3DIC structure includes a die, a conductive terminal, and a dielectric structure. The die is bonded to a carrier through a bonding film. The conductive terminal is disposed over and electrically connected to the die. The dielectric structure comprises a first dielectric layer and a second dielectric layer. The first dielectric layer is disposed laterally aside the die. The second dielectric layer is disposed between the first dielectric layer and the bonding film, and between the die and the boding film. A second edge of the second dielectric layer is more flat than a first edge of the first dielectric layer.
Claims19
A 3DIC structure, comprising:
- a die bonding to a carrier through a bonding film;
- a conductive terminal disposed over and electrically connected to the die,
- a dielectric structure comprising:
- a first dielectric layer disposed laterally aside the die;
- and
- a second dielectric layer disposed between the first dielectric layer and the bonding film, and between the die and the boding film,
- wherein a second edge of the second dielectric layer is more flat than a first edge of the first dielectric layer,
- wherein a first corner of the first dielectric layer comprises a first rounding portion, a second corner of the second dielectric layer comprises a second rounding portion;
- and
- a width of the second rounding portion is less than a width of the first rounding portion, a height of the second rounding portion is less than a height of the first rounding portion.
A 3DIC structure, comprising:
- a die bonding to a carrier through a bonding film;
- a conductive terminal disposed over and electrically connected to the die,
- a dielectric structure comprising:
- a first dielectric layer disposed laterally aside the die;
- and
- a second dielectric layer disposed between the first dielectric layer and the bonding film, and between the die and the boding film,
- wherein a second edge of the second dielectric layer is more flat than a first edge of the first dielectric layer,
- wherein a ratio of a contact area between the bonding film and the carrier to an area of the carrier facing the bonding film ranges from 0.99 to 1.
A 3DIC structure, comprising:
- a die bonding to a carrier through a bonding film;
- a conductive terminal disposed over and electrically connected to the die,
- a dielectric structure comprising:
- a first dielectric layer disposed laterally aside the die;
- and
- a second dielectric layer disposed between the first dielectric layer and the bonding film, and between the die and the boding film,
- wherein a second edge of the second dielectric layer is more flat than a first edge of the first dielectric layer,
- wherein a corner of the die comprises a rounding portion, and a width of the rounding portion ranges from 0 to 0.4 μm.
Dependencies are inferred from the claim text.