Method for producing electronic device with multi-layer contact
AssigneeInfineon Technologies AG
InventorsAlexander Heinrich, Michael Juerss, Konrad Roesl, Oliver Eichinger, Kok Chai Goh, Tobias Schmidt
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Abstract
A method for producing an electric device with a multi-layer contact is disclosed. In an embodiment, a method includes providing a carrier, the carrier having a metallic layer disposed on its surface, providing a semiconductor substrate, forming a layer stack on the semiconductor substrate and attaching the layer stack of the semiconductor substrate to the metallic layer of the carrier so that an intermetallic phase is formed between the metallic layer and the solder layer.
Claims20
A method for fabricating an electronic device, the method comprising:
- providing a carrier, the carrier having a metallic layer disposed on its surface, wherein the metallic layer comprises Ni or NiNiP;
- providing a semiconductor substrate;
- forming a layer stack on the semiconductor substrate by:
- directly depositing an electrical contact layer on the semiconductor substrate, the electrical contact layer being a single elemental Al layer;
- directly depositing a functional layer on the electrical contact layer, the functional layer comprising Ti or an alloy containing Ti;
- directly depositing an adhesion layer on the functional layer, the adhesion layer comprising Ni or NiV;
- directly depositing a solder layer on the adhesion layer, the solder layer being a single element Sn layer or a noble metal free alloy layer containing Sn;
- and
- directly depositing a protective layer on the solder layer, the protection layer being an Ag layer;
- and
- bonding the layer stack of the semiconductor substrate to the metallic layer of the carrier so that an intermetallic phase is formed between the metallic layer and the solder layer, the intermetallic phase comprising a binary alloy of Ni/Sn.
A method for fabricating an electronic device, the method comprising:
- providing a semiconductor substrate;
- directly depositing an electrical contact layer on the semiconductor substrate, the electrical contact layer being a single elemental Al layer;
- directly depositing a functional layer on the electrical contact layer, the functional layer comprising Ti or an alloy containing Ti;
- directly depositing an adhesion layer onto the functional layer, the adhesion layer comprising Ni;
- directly depositing a solder layer on the adhesion layer, the solder layer being a single element Sn layer;
- providing a carrier having a metallic layer disposed on its surface, wherein the metallic layer comprises Ni or NiNiP;
- and
- bonding the semiconductor substrate on the carrier so that a homogenous layer comprising an intermetallic phase of Sn and Ni is formed based on isothermal solidification at a soldering temperature.
A method for fabricating an electronic device, the method comprising:
- providing a semiconductor substrate;
- directly depositing an electrical contact layer on the semiconductor substrate, the electrical contact layer consisting essentially of Al;
- directly depositing a functional layer on the electrical contact layer, the functional layer consisting essentially of Ti or an alloy containing Ti;
- directly depositing an adhesion layer onto the functional layer, the adhesion layer consisting essentially of Ni;
- directly depositing a solder layer on the adhesion layer, the solder layer consisting essentially of Sn;
- providing a carrier having a metallic surface, wherein the metallic surface comprises Ni or NiNiP;
- and
- bonding the solder layer of the semiconductor substrate to the metallic surface of the carrier so that a homogenous layer comprising an intermetallic phase of Sn and Ni is formed based on isothermal solidification at a soldering temperature.
Dependencies are inferred from the claim text.