Semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJie Chen, Ying-Ju Chen, Hsien-Wei Chen, Tsung-Yuan Yu
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Abstract
A semiconductor device includes a substrate including a surface, a plurality of pads disposing on the surface of the substrate, the plurality of pads includes a non-solder mask defined (NSMD) pad and a solder mask defined (SMD) pad, and the NSMD pad is arranged at a predetermined location. Further, a method of manufacturing a semiconductor device includes providing a substrate, disposing a plurality of pads on a surface of the substrate, disposing a solder mask over the surface of the substrate and the plurality of pads, forming a first recess in the solder mask to surround one of the plurality of pads, and forming a second recess in the solder mask and above one of the plurality of pads.
Claims20
A semiconductor device, comprising:
- a substrate comprising a pair of first edges parallel to each other, a pair of second edges orthogonal to the pair of first edges, and a center point, wherein first vertical distances defined as distances between the center point and each of the pair of first edges are the same, and second vertical distances defined as distances between the center point and each of the pair of second edges are the same;
- a plurality of pads disposed over the substrate;
- and
- a solder mask disposed over the substrate, the solder mask comprising:
- at least one first recess portion exposing an entire top surface and sidewalls of at least one of the plurality of the pads;
- and
- at least one second recess portion exposing a portion of a top surface of at least one of the plurality of the pads,
- wherein a first distance is defined as distance between the center point and the first recess portion, the first distance is greater than the first vertical distance and the second vertical distance, and a pad size of the at least one of the plurality of pads exposed through the first recess portion and a pad size of the at least one of the plurality of pads exposed through the second recess portion are the same.
A semiconductor device, comprising:
- a substrate comprising a first edge, a second edge orthogonal to the first edge, a corner formed by the first edge and the second edge, and a center point, wherein a first vertical distance is defined between the center point and the first edge, and a second vertical distance is defined as a distance between the center point and the second edge;
- a plurality of pads disposed over the substrate;
- and
- a solder mask disposed over the substrate, the solder mask comprising:
- a plurality of first recess portions disposed in the corner and exposing an entire top surface and sidewalls of several of the plurality of the pads, wherein at least one of the plurality of first recess portions is closer to both of the first edge and the second edge than other first recess portions;
- and
- at least one second recess portion exposing a portion of a top surface of at least one of the plurality of the pads,
- wherein a first distance is defined as a distance between the center point and the first recess portion closer to the first edge and the second edge, the first distance is greater than the first vertical distance and the second vertical distance, and a pad size of the several of the plurality of pads exposed through the first recess portions and a pad size of the at least one of the plurality of pads exposed through the second recess portion are the same.
A semiconductor device, comprising:
- a substrate comprising a pair of first edges parallel to each other, a pair of second edges orthogonal to the first edge, and a center point, wherein first vertical distances defined as distances between the center point and each of the pair of first edges are the same, and second vertical distances defined as distance between the center point and each of the pair of second edges are the same;
- a plurality of first non-solder mask defined (NSMD) pads disposed over the substrate;
- and
- a plurality of solder mask defined (SMD) pads disposed over the substrate;
- wherein a first distance is defined as a distance between the center point and each of the first NSMD pads, the first distance is greater than the first vertical distance and the second vertical distance, and a pad size of the plurality of first NSMD pads and a pad size of the plurality of SMD pads are the same.
Dependencies are inferred from the claim text.