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US 10,475,746 B2Granted
Through-holes of a semiconductor chip
AssigneeLongitude Licensing Limited
InventorAkihiko Hatasawa
Life of this patent
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Abstract
One semiconductor chip includes a substrate having insulation properties, a plurality of bump electrodes provided on one surface of the substrate, a plurality of recesses provided in the other surface of the substrate, and a solder layer disposed within the recesses. The recesses are formed such that the area of the opening decreases from the other surface side toward the one surface side of the substrate.
Claims20
A semiconductor chip comprising:
- a semiconductor substrate;
- a plurality of bump electrodes disposed on a first face of the semiconductor substrate;
- and
- through-holes passing through the semiconductor substrate from the first face of the semiconductor substrate towards a second face of the semiconductor substrate, wherein the through-holes comprise:
- a first aperture extending from the second face of the semiconductor substrate into an interior of the semiconductor substrate;
- and
- a second aperture provided between the first face of the semiconductor substrate and the first aperture, wherein a first aperture area of the first aperture decreases with a first reduction ratio from the second face of the semiconductor substrate towards the first face of the semiconductor substrate, a second aperture area of the second aperture decreases with a second reduction ratio that is smaller than the first reduction ratio from the second face of the semiconductor substrate towards the first face of the semiconductor substrate, and the first and second apertures are formed with a conical shape.
4 more elements
A method comprising:
- forming a plurality of bump electrodes on a first face of a semiconductor substrate of a semiconductor chip;
- and
- forming through-holes passing through the semiconductor substrate from the first face of the semiconductor substrate towards a second face of the semiconductor substrate, wherein the through-holes comprise:
- a first aperture extending from the second face of the semiconductor substrate into an interior of the semiconductor substrate;
- and
- a second aperture provided between the first face of the semiconductor substrate and the first aperture, wherein a first aperture area of the first aperture decreases with a first reduction ratio from the second face of the semiconductor substrate towards the first face of the semiconductor substrate, a second aperture area of the second aperture decreases with a second reduction ratio that is smaller than the first reduction ratio from the second face of the semiconductor substrate towards the first face of the semiconductor substrate, and the first and second apertures are formed with a conical shape.
3 more elements
Dependencies are inferred from the claim text.