Semiconductor device having a metal adhesion and barrier structure and a method of forming such a semiconductor device

A semiconductor device, comprising:

• a metal structure electrically connected to a semiconductor body;
• and
• a metal adhesion and barrier structure between the metal structure and the semiconductor body,
• wherein the metal adhesion and barrier structure comprises:
• a first layer comprising Al and Cu;
• a second layer comprising Ti;
• and
• a third layer comprising TiN,
• wherein the first layer comprising Al and Cu is in contact with the semiconductor body.

A method of manufacturing a semiconductor device, the method comprising:

• forming a metal adhesion and barrier structure on a semiconductor body;
• forming a metal structure on the metal adhesion and barrier structure, wherein formation of the metal adhesion and barrier layer comprises:
• forming a first layer comprising titanium and tungsten;
• forming a second layer comprising titanium, tungsten, and nitrogen on the first layer comprising titanium and tungsten;
• and
• forming a third layer comprising tungsten on the second layer comprising titanium, tungsten, and nitrogen,
• wherein the method further comprises:
• forming a fourth layer of the metal adhesion and barrier layer on the third layer comprising tungsten, the fourth layer comprising titanium and tungsten;
• and/or
• forming a metal adhesion and barrier substructure between the semiconductor body and the first layer comprising titanium and tungsten, the metal adhesion and barrier substructure being in contact with the semiconductor body.

A semiconductor device, comprising:

• a metal structure electrically connected to a semiconductor body;
• and
• a metal adhesion and barrier structure between the metal structure and the semiconductor body, the metal adhesion and barrier structure comprising a first layer comprising titanium and tungsten, a second layer comprising titanium, tungsten, and nitrogen on the first layer comprising titanium and tungsten, and a third layer comprising tungsten on the second layer comprising titanium, tungsten, and nitrogen;
• and
• a metal adhesion and barrier substructure between the semiconductor body and the first layer comprising titanium and tungsten, the metal adhesion and barrier substructure being in contact with the semiconductor body.

A semiconductor device, comprising:

• a metal structure electrically connected to a semiconductor body;
• and
• a metal adhesion and barrier structure between the metal structure and the semiconductor body,
• wherein the metal adhesion and barrier structure comprises:
• a TiW layer;
• a TiWN layer on the TiW layer;
• and
• a W layer on the TiWN layer.

A method of manufacturing a semiconductor device, the method comprising:

• forming a metal adhesion and barrier structure on a semiconductor body;
• and
• forming a metal structure on the metal adhesion and barrier structure,
• wherein forming the metal adhesion and barrier layer comprises:
• forming a TiW layer;
• forming a TiWN layer on the TiW layer;
• and
• forming a W layer on the TiWN layer.