Method for forming semiconductor device structure having conductive structure with twin boundaries

A method for forming a semiconductor device structure, the method comprising:

• forming a first conductive structure over a substrate, the first conductive structure including twin boundaries;
• and
• wherein:
• a spacing between a first twin boundary and a second twin boundary is a twin-lamella width;
• and
• the forming the first conductive structure includes:
• manipulating process conditions so as to promote formation of a first range of twin-lamella widths such that:
• the first conductive structure has an increased failure current density (FCD) relative to a baseline FCD of an otherwise substantially corresponding second conductive structure which has an unpromoted second range of twin-lamella widths ;
• a measure of central tendency of the first range is smaller than the measure of central tendency of the second range;
• and
• the first conductive structure has an ohmic resistance which is substantially the same as the second conductive structure.

A method for forming a semiconductor device structure, the method comprising:

• forming a first conductive structure over a substrate, the first conductive structure including twin boundaries;
• and
• forming a via-trench structure over the first conductive structure, the via-trench structure including twin boundaries;
• and
• wherein the forming the first conductive structure includes:
• manipulating process conditions so as to promote formation of the twin boundaries resulting in a promoted density of twin boundaries such that:
• the first conductive structure has an increased failure current density (FCD) relative to a baseline FCD of an otherwise substantially corresponding second conductive structure which has an unpromoted density of twin boundaries, the unpromoted density being less than the promoted density;
• and
• the first conductive structure has an ohmic resistance which is substantially the same as the second conductive structure.