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US 10,475,740 B2Granted
Fuse structure of dynamic random access memory
AssigneesUnited Microelectronics Corp., Fujian Jinhua Integrated Circuit Co., Ltd.
InventorYukihiro Nagai
Life of this patent
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Abstract
A fuse structure for dynamic random access memory (DRAM) includes: a shallow trench isolation (STI) in a substrate; a first select gate in the substrate and adjacent to one side of the STI; a second select gate in the substrate and adjacent to another side of the STI; and a gate structure on the STI, the first select gate, and the second select gate.
Claims20
A fuse structure for dynamic random access memory (DRAM), comprising:
- a shallow trench isolation (STI) in a substrate;
- a first select gate in the substrate and adjacent to one side of the STI;
- a second select gate in the substrate and adjacent to another side of the STI;
- and
- a gate structure on the STI, the first select gate, and the second select gate.
2 more elements
A fuse structure for dynamic random access memory (DRAM), comprising:
- a shallow trench isolation (STI) in a substrate;
- a first select gate in the substrate and adjacent to one side of the STI;
- a second select gate in the substrate and adjacent to another side of the STI;
- a first assist gate in the substrate and between the STI and the first select gate;
- a second assist gate in the substrate and between the STI and the second select gate;
- and
- a gate structure on the STI, the first assist gate, and the second assist gate.
4 more elements
Dependencies are inferred from the claim text.