US 10,475,733 B2Granted

Method and structures for heat dissipating interposers

AssigneeInvensas Corporation

InventorsCyprian Emeka Uzoh, Pezhman Monadgemi, Terrence Caskey, Fatima Lina Ayatollahi, Belgacem Haba, Charles G. Woychik, Michael Newman

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Abstract

An interconnect element includes a semiconductor or insulating material layer that has a first thickness and defines a first surface; a thermally conductive layer; a plurality of conductive elements; and a dielectric coating. The thermally conductive layer includes a second thickness of at least 10 microns and defines a second surface of the interconnect element. The plurality of conductive elements extend from the first surface of the interconnect element to the second surface of the interconnect element. The dielectric coating is between at least a portion of each conductive element and the thermally conductive layer.

Claims9

Dependent claims

An assembly comprising:

an interconnect component comprising:
a thermally conductive carbon layer;
an insulating layer overlying the thermally conductive carbon layer;
a plurality of conductive vias extending through the conductive layer and the insulating layer, such that a first end of the plurality of conductive vias is disposed at an outermost surface of the insulating layer and an opposed second end of the plurality of conductive vias is disposed at an outermost surface of the thermally conductive carbon layer;
and
a dielectric layer extending along a length of the plurality of conductive vias, such that the thermally conductive carbon layer and the insulating layer are spaced away from the plurality of conductive vias by the dielectric layer.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application: 16/156,595Filed 10 Oct 2018 · continuation
Priority: 19 Dec 2012
Published: US 2019/0139878 A19 May 2019
Granted: 12 Nov 2019
Term ends: Not estimatedThe source records don’t support an estimate.

Classification13 codes

H10W 70/635
Vias, e.g. via plugs: through-vias
H10W 20/0245
The interconnections being through-semiconductor vias: comprising use of blind vias during the manufacture
H10W 20/0249
The interconnections being through-semiconductor vias: wherein the through-semiconductor via protrudes from backsides of the chips, wafers or…
H10W 20/074
Of dielectric parts thereof: of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or…

Family

Application13/720,346Parent of this division · filed 19 Dec 2012
Application14/815,282Parent of this division · filed 31 Jul 2015
US 9,123,780 B2Parent of this division · filed 1 Sep 2015
Application15/626,687Parent of this continuation · filed 19 Jun 2017
US 9,685,401 B2Parent of this division · filed 20 Jun 2017
US 10,103,094 B2Parent of this continuation · filed 16 Oct 2018
US 2019/0139878 A1Pre-grant publication · published 9 May 2019
Application15/626,687Parent of this division
US 2014/0167267 A1Published application
US 2015/0340310 A1Published application
US 2017/0365546 A1Published application
US 10,475,733 B2This patent

From the US filing history. Foreign family members aren’t listed.