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US 10,475,723 B1Granted
IGBT heat dissipation structure
AssigneeAmulaire Thermal Technology, Inc.
InventorsTze-Yang Yeh, Chun-Lung Wu
Life of this patent
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Abstract
An IGBT heat dissipation structure includes a layer of IGBT chips, a bonding layer, a cold spray layer, a thermal spray layer, and a heat dissipation layer. The thermal spray layer is disposed on top of the heat dissipation layer. The cold spray layer is disposed on top of the thermal spray layer. The bonding layer is disposed on top of the cold spray layer, and the layer of IGBT chips is disposed on top of the bonding layer.
Claims10
An IGBT heat dissipation structure, comprising:
- a layer of IGBT chips, a bonding layer, a cold spray layer, a thermal spray layer, and a heat dissipation layer;
- wherein the thermal spray layer is disposed on the heat dissipation layer, the cold spray layer is disposed on the thermal spray layer, the bonding layer is disposed on the cold spray layer, and the layer of IGBT chips is disposed on the bonding layer.
Dependencies are inferred from the claim text.