Semiconductor structure and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsPei-Haw Tsao, Chien-Jung Wang
Life of this patent
Estimating the term…
Abstract
A semiconductor structure includes a substrate comprising a die pad disposed over the substrate, and a passivation disposed over the substrate and surrounding the die pad, a redistribution layer (RDL) comprising a dielectric layer disposed over the passivation and an interconnect structure disposed within the dielectric layer and electrically connecting with the die pad, a conductive bump disposed over and electrically connected with the interconnect structure; and an isolation layer surrounding the substrate and the RDL.
Claims20
A method of manufacturing a semiconductor structure, comprising:
- receiving a substrate comprising a die pad disposed over the substrate and a passivation disposed over the substrate and surrounding the die pad;
- forming an RDL over the passivation, wherein the RDL includes a dielectric layer disposed over the passivation and an interconnect structure disposed within the dielectric layer and electrically connected with the die pad;
- disposing a conductive bump over the interconnect structure;
- cutting along a sidewall of the semiconductor structure to form a plurality of recesses over a portion of the sidewall of the semiconductor structure;
- and
- disposing an isolation layer to surround the substrate and the RDL;
- wherein the cutting along the sidewall of the semiconductor structure to form the plurality of recesses over the portion of the sidewall of the semiconductor structure is performed prior to the disposing the isolation layer.
A method of manufacturing a semiconductor structure, comprising:
- receiving a substrate comprising a die pad disposed over the substrate and a passivation disposed over the substrate and surrounding the die pad;
- disposing a conductive bump over the passivation to form a semiconductive wafer including the substrate and the conductive bump;
- dividing the semiconductive wafer into at least one singulated device, wherein a plurality of recesses are formed on a sidewall of the substrate of the at least one singulated device during the division of the semiconductive wafer;
- and
- disposing an isolation layer on the sidewall of the substrate at the plurality of recesses thereon.
A method of manufacturing a semiconductor structure, comprising:
- receiving a substrate comprising a die pad disposed over the substrate and a passivation disposed over the substrate and surrounding the die pad;
- forming an RDL over the passivation, wherein the RDL includes a dielectric layer disposed over the passivation and an interconnect structure disposed within the dielectric layer and electrically connected with the die pad;
- cutting along a sidewall of the semiconductor structure to form a plurality of recesses over a sidewall of the substrate and a sidewall of the passivation;
- and
- after cutting along the sidewall of the semiconductor structure to form the plurality of recesses over the sidewall of the substrate and the sidewall of the passivation, disposing an isolation layer on the sidewall of the substrate at the plurality of recesses and the sidewall of the passivation at the plurality of recesses.
Dependencies are inferred from the claim text.