Semiconductor device package comprising a dielectric layer with built-in inductor

A semiconductor device package, comprising:

• a dielectric layer comprising a first surface, and a second surface opposite to the first surface;
• a first redistribution layer (RDL) adjacent to the first surface of the dielectric layer;
• a second RDL adjacent to the second surface of the dielectric layer, wherein at least one of the first RDL and the second RDL comprises an insulating layer, and a hardness of the insulating layer is greater than a hardness of the dielectric layer;
• an inductor disposed in the dielectric layer, the inductor comprising a plurality of induction pillars through the dielectric layer, a plurality of first conductive pieces adjacent to the first surface of the dielectric layer, and a plurality of second conductive pieces adjacent to the second surface of the dielectric layer, wherein each of the induction pillars extends through the dielectric layer, and each of the induction pillars is interconnected between a respective one of the first conductive pieces and a respective one of the second conductive pieces;
• and
• a first electronic component and a second electronic component disposed in the dielectric layer and between the first RDL and the second RDL, and electrically connected to each other through the inductor.