US 10,475,709 B1 · Semiconductor device and method for fabricating the same

Abstract

A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region; forming a first fin-shaped structure on the first region; removing part of the first fin-shaped structure to forma first trench; forming a dielectric layer in the first trench, wherein the dielectric layer comprises silicon oxycarbonitride (SiOCN); and planarizing the dielectric layer to form a first single diffusion break (SDB) structure.

Claims10

Dependent claims

A semiconductor device, comprising:

a substrate having a first region and a second region;
a first fin-shaped structure on the first region;
and
a first single diffusion break (SDB) structure in the first fin-shaped structure to divide the first fin-shaped structure into a first portion and a second portion, wherein the first SDB structure comprises silicon oxycarbonitride (SiOCN).

1 more element

Dependencies are inferred from the claim text.

Facts

Application

16/030,871Filed 10 Jul 2018

Priority

TW 107120159 A12 Jun 2018

Granted

12 Nov 2019

Term ends

Not estimatedThe source records don’t support an estimate.

Classification9 codes

H10D 84/038
Using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology: using silicon technology, e.g. SiGe
H10D 84/0188
The components including complementary IGFETs, e.g. CMOS devices: manufacturing their isolation regions
H10D 84/0193
The components including complementary IGFETs, e.g. CMOS devices: the components including FinFETs
H10D 84/853
Complementary IGFETs, e.g. CMOS: comprising FinFETs

Semiconductor device and method for fabricating the same

Life of this patent

Semiconductor device and method for fabricating the same

Life of this patent

Abstract

Claims10