Semiconductor structure and method for forming the same
AssigneeUnited Microelectronics Corp.
InventorsYong-Liang Li, Hao Su
Life of this patent
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Abstract
A semiconductor structure includes a substrate and a CMOS structure. The CMOS structure includes a PMOS structure and a NMOS structure. The PMOS structure includes two first source/drain regions disposed in the substrate, a first gate dielectric disposed partially in the substrate between the first source/drain regions, and a fully silicided gate electrode disposed on the first gate dielectric. The NMOS structure includes two second source/drain regions disposed in the substrate, a second gate dielectric disposed partially in the substrate between the second source/drain regions, and a non-silicided conductive gate electrode disposed on the second gate dielectric.
Claims10
A method for forming a semiconductor structure, comprising:
- providing a preliminary structure having a PMOS region and a NMOS region, the preliminary structure comprising:
- a substrate;
- two first source/drain regions formed in the substrate in the PMOS region;
- and
- two second source/drain regions formed in the substrate in the NMOS region;
- forming a first gate dielectric partially into the substrate between the first source/drain regions and a second gate dielectric partially into the substrate between the second source/drain regions;
- forming a fully silicided gate electrode on the first gate dielectric, wherein forming the fully silicided gate electrode comprises forming a metal layer on the first gate dielectric but not on the second gate dielectric;
- and
- forming a non-silicided conductive gate electrode on the second gate dielectric.
Dependencies are inferred from the claim text.