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US 10,475,707 B2Granted
Semiconductor device and method of fabricating the same
AssigneeSamsung Electronics Co., Ltd.
InventorsGi Gwan Park, Jung Gun You, Ki II Kim, Sug Hyun Sung, Myung Yoon Um
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Abstract
A method of manufacturing a semiconductor device includes forming a first fin-type pattern and a second fin-type pattern which are separated by a first trench between facing ends thereof, forming a first insulating layer filling the first trench, removing a portion of the first insulating layer to form a second trench on the first insulating layer, and forming a third trench by enlarging a width of the second trench.
Claims10
A method of manufacturing a semiconductor device, comprising:
- forming a first fin-type pattern and a second fin-type pattern which are arranged in a line, the first and second fin-type patterns including a long side and a short side, respectively, and separated by a first trench between the adjacent short sides of the first and second fin-type patterns;
- forming a first insulating layer to fill the first trench;
- forming a second trench on the first insulating layer by removing a portion of the first insulating layer;
- and
- forming a third trench by enlarging a width of the second trench.
2 more elements
Dependencies are inferred from the claim text.