US 10,475,702 B2 · Conductive feature formation and structure using bottom-up filling deposition

Abstract

The present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In some embodiments, a structure includes a first dielectric layer over a substrate, a first conductive feature through the first dielectric layer, the first conductive feature comprising a first metal, a second dielectric layer over the first dielectric layer, and a second conductive feature through the second dielectric layer having a lower convex surface extending into the first conductive feature, wherein the lower convex surface of the second conductive feature has a tip end extending laterally under a bottom boundary of the second dielectric layer.

Claims20

Dependent claims

A method for semiconductor processing, the method comprising:

forming a first conductive feature in a first dielectric layer;
forming a concave surface on the first conductive feature, the concave surface extends continuously from a first sidewall of a conductive barrier layer of the first conductive feature to a second sidewall of the conductive barrier layer of the first conductive feature;
and
forming a second conductive feature in a second dielectric layer, the second dielectric layer being over the first dielectric layer, the second conductive feature having a convex surface mating with the concave surface of the first conductive feature, wherein the convex surface of the second conductive feature has a tip end extending laterally under a bottom surface of the second dielectric layer.

1 more element

Dependencies are inferred from the claim text.

Conductive feature formation and structure using bottom-up filling deposition

Life of this patent

Conductive feature formation and structure using bottom-up filling deposition

Life of this patent

Abstract

Claims20