Ambipolar transistor and electronic sensor of high sensitivity using the same
OwnerTeresa Ohinventor
Life of this patent
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Abstract
Disclosed are an ambipolar transistor and a high-sensitivity electronic sensor using the same. The ambipolar transistor includes: a substrate; a gate formed on the substrate; a gate insulating film formed of an SiOC thin film and disposed on the substrate and the gate; and a source portion and a drain portion formed on the gate insulating film and spaced apart from each other, wherein the source portion and the drain portion comprise: a main source terminal and a main drain terminal disposed on the gate insulating film at right and left sides of the gate, respectively; and a plurality of source sub-terminals and a plurality of drain sub-terminals alternately arranged between the main source terminal and the main drain terminal, respectively.
Claims3
A high-sensitivity electronic sensor using an ambipolar transistor, comprising:
- a sensor part connected to a gate;
- a power source connected to a drain terminal;
- a display connected to a source terminal;
- and
- a variable resistor for controlling sensitivity is located in front of the sensor part connected to the gate,
- wherein diffusion current between the source terminal and the drain terminal allows reception of electrical signals, and
- the ambipolar transistor comprises:
- a substrate;
- the gate formed on the substrate;
- a gate insulating film formed of an SiOC thin film and disposed on the substrate and the gate;
- and
- a source portion and a drain portion formed on the gate insulating film and spaced apart from each other,
- wherein the source portion and the drain portion comprise:
- a main source terminal and a main drain terminal disposed on the gate insulating film at right and left sides of the gate, respectively;
- and a plurality of source sub-terminals and a plurality of drain sub-terminals arranged between the main source terminal and the main drain terminal, respectively.
A high-sensitivity electronic sensor using an ambipolar transistor, comprising:
- a sensor part connected to a gate;
- a power source connected to a drain terminal;
- a display connected to a source terminal;
- and
- a variable resistor for controlling sensitivity is located in front of the sensor part connected to the gate,
- wherein diffusion current between the source terminal and the drain terminal allows reception of electrical signals, and
- the ambipolar transistor comprises:
- a substrate;
- the t-gate connected to the substrate;
- a first SiOC insulating film formed on the substrate;
- an interlayer electrode formed on the first SiOC insulating film;
- a second SiOC insulating film formed on the interlayer electrode;
- and
- a source portion and a drain portion formed on the second SiOC insulating film and spaced apart from each other,
- and
- wherein the source portion and the drain portion comprise:
- a main source terminal and a main drain terminal disposed at right and left sides of the second SiOC insulating film, respectively;
- and a plurality of source sub-terminals and a plurality of drain sub-terminals arranged between the main source terminal and the main drain terminal, respectively.
Dependencies are inferred from the claim text.