Method of manufacture of a semiconductor on insulator structure

A method of preparing a multilayer structure, the method comprising the following steps in order:

• (a) forming a front handle silicon dioxide layer on a front handle surface of a single crystal silicon handle wafer, wherein the single crystal silicon handle wafer comprises two major, generally parallel surfaces, one of which is the front handle surface of the single crystal silicon handle wafer and the other of which is the back handle surface of the single crystal silicon handle wafer, a circumferential edge joining the front handle surface and the back handle surface of the single crystal silicon handle wafer, a central plane between the front handle surface and the back handle surface of the single crystal silicon handle wafer, and a bulk region between the front and back handle surfaces of the single crystal silicon handle wafer;
• (b) forming a front handle silicon nitride layer on the front handle silicon dioxide layer;
• (c) annealing the single crystal silicon handle wafer comprising the front handle silicon dioxide layer and the front handle silicon nitride layer at a temperature of at least about 900° C. and duration between about 10 minutes and about 10 hours sufficient to densify the front handle silicon dioxide layer, the front handle silicon nitride layer, or both;
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• (d) bonding the front handle silicon nitride layer to a donor silicon dioxide layer on a front donor surface of a single crystal silicon donor wafer to thereby form a bonded structure, wherein the single crystal silicon donor wafer comprises two major, generally parallel surfaces, one of which is the front donor surface of the single crystal silicon donor wafer and the other of which is the back donor surface of the single crystal silicon donor wafer, a circumferential edge joining the front donor surface and the back donor surface of the single crystal silicon donor wafer, a central plane between the front donor surface and the back donor surface of the single crystal silicon donor wafer, and a bulk region between the front and back donor surfaces of the single crystal silicon donor wafer, and further wherein the single crystal silicon donor wafer comprises a damage layer formed by ion implantation.

A method of preparing a multilayer structure, the method comprising:

• (a) forming a front donor silicon dioxide layer on a front donor surface of a single crystal silicon donor wafer, wherein the single crystal silicon donor wafer comprises two major, generally parallel surfaces, one of which is the front donor surface of the single crystal silicon donor wafer and the other of which is the back donor surface of the single crystal silicon donor wafer, a circumferential edge joining the front donor surface and the back donor surface of the single crystal silicon donor wafer, a central plane between the front donor surface and the back donor surface of the single crystal silicon donor wafer, and a bulk region between the front and back donor surfaces of the single crystal silicon donor wafer;
• (b) forming a front donor silicon nitride layer on the front donor silicon dioxide layer;
• (c) annealing the single crystal silicon donor wafer comprising the front donor silicon dioxide layer and the front donor silicon nitride layer for a duration between about 10 minutes and about 10 hours and at a temperature of at least about 900° C. to thereby densify the front donor silicon nitride layer by at least 13%;
• (d) implanting ions through the front donor silicon nitride layer and the front donor silicon dioxide layer and into the bulk region of the annealed single crystal silicon donor wafer to thereby form a damage layer;
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• (e) bonding the front donor silicon nitride layer to a handle silicon dioxide layer on a front handle surface of a single crystal silicon handle wafer, wherein the single crystal silicon handle wafer comprises two major, generally parallel surfaces, one of which is the front handle surface of the single crystal silicon handle wafer and the other of which is the back handle surface of the single crystal silicon handle wafer, a circumferential edge joining the front handle surface and the back handle surface of the single crystal silicon handle wafer, a central plane between the front handle surface and the back handle surface of the single crystal silicon handle wafer, and a bulk region between the front and back handle surfaces of the single crystal silicon handle wafer.