Method for forming single diffusion breaks between finFET devices and the resulting devices

A method, comprising:

• forming a first hard mask layer above a semiconductor substrate, said first hard mask layer being patterned to define a plurality of fin openings and at least a first diffusion break opening;
• performing a first etch process through said first hard mask layer to define a plurality of fins in said semiconductor substrate and a first diffusion break recess in a selected fin of said plurality of fins;
• forming a first dielectric layer between said plurality of fins and in said first diffusion break recess to define a first diffusion break in said selected fin;
• forming a second diffusion break in said selected fin through a second opening in said first hard mask layer, wherein said second diffusion break is deeper than said first diffusion break;
• forming a second hard mask layer above said first hard mask layer and said first dielectric layer, said second hard mask layer covering said second diffusion break and having a third opening positioned above said first diffusion break;
• forming a second dielectric layer in said third opening;
• removing said second hard mask layer;
• and
• performing a second etch process in the presence of said first hard mask layer after removing said second hard mask layer to recess said first dielectric layer to expose upper portions of said plurality of fins, wherein said second etch process removes said second dielectric layer, a portion of said first diffusion break, a portion of said second diffusion break, and a first portion of said first hard mask layer, wherein a second portion of said first hard mask layer remains above said plurality of fins after said first etch process.