Self aligned buried power rail
AssigneeGlobalfoundries Inc.
InventorsNicholas V. Licausi, Guillaume Bouche, Lars W. Liebmann
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Abstract
The present disclosure relates to semiconductor structures and, more particularly, to self-aligned buried power rail structures and methods of manufacture. The method includes: forming at least one fin structure of a first dimension in a substrate; forming at least one fin structure of a second dimension in the substrate; removing at least a portion of the at least one fin structure of the second dimension to form a trench; filling the trench with conductive metal to form a buried power rail structure within the trench; and forming a contact to the buried power rail structure.
Claims18
A method, comprising:
- forming at least one fin structure of a first dimension in a substrate;
- forming at least one fin structure of a second dimension in the substrate;
- removing at least a portion of the at least one fin structure of the second dimension to form a trench;
- filling the trench with conductive metal to form a buried power rail structure within the trench;
- and
- forming a contact to the buried power rail structure, wherein:
- the forming of the at least one fin structure of the first dimension comprises a first spacer transfer process which forms a first spacer that defines the at least one fin structure of the first dimension;
- the forming of the at least one fin structure of the second dimension comprises a second spacer transfer process which forms a second spacer that defines the at least one fin structure of the second dimension;
- and
- the second spacer is wider than the first spacer.
A method comprising:
- forming a first spacer of a first dimension over a substrate material;
- forming a second spacer of a second dimension, wider than the first dimension and above the first spacer;
- transferring the first dimension of the first spacer into the substrate to form a narrow fin structure;
- transferring the second dimension of the second spacer into the substrate to form a wide fin structure, wherein the narrow fin structure is narrower than the wide fin structure;
- removing at least part of the wide fin structure to form a trench, which is isolated from the narrow fin structure;
- forming a buried power rail by filling the trench with conductive material;
- and
- forming a contact to the buried power rail.
Dependencies are inferred from the claim text.