Method for processing a holding plate, in particular for a clamp for holding a wafer

A method for processing a holding plate of a clamping device for holding a component, wherein the holding plate has a SiC-based surface on which at least one protruding, SiC-based surface element is formed, comprising the steps of

• locally limited heating of the holding plate in a predetermined surface section,
• creating the at least one surface element at a predetermined surface section by chemical vapor deposition, and
• post-processing of the at least one surface element, wherein:
• (a) at least one of a height and a thickness of the at least one surface element is set;
• (b) the post-processing of the at least one surface element is conducted by laser irradiation;
• (c) in a first phase laser parameters of the laser irradiation are set in such a way that a laser ablation takes place;
• and (d) in a second phase laser parameters of the laser irradiation are set in such a way that a healing of the surface of the at least one surface element is carried out.