Wafer charges monitoring
AssigneeAdvanced Ion Beam Technology, Inc.
InventorsChih-Chiang Wu, Chun-Chin Kang, Yu-Ho Ni, Chien-Ta Feng
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AssigneeAdvanced Ion Beam Technology, Inc.
InventorsChih-Chiang Wu, Chun-Chin Kang, Yu-Ho Ni, Chien-Ta Feng
Estimating the term…
Apparatus and method for monitoring wafer charges are proposed. A conductive pin, a conductive spring and a conductive line are configured in series to connect the backside surface of the wafer and the sample conductor so that the backside surface of the wafer and the surface of the sample conductor have identical charge density. Hence, by using a static electricity sensor positioned close to the surface of the sample conductor, the charges on the wafer may be monitored. Note that the charges appeared on the frontside surface of the wafer induces charges on the backside surface of the wafer. As usual, the sample conductor is a sheet conductor and properly insulated from the surrounding environment. As usual, the sample conductor and the static electricity sensor are positioned outside the chamber where the wafer is placed and processed, so as to simplify the apparatus inside the chamber and reduce the contamination risk.
An apparatus for wafer charge monitoring, comprising:
Dependencies are inferred from the claim text.