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AssigneeSTMicroelectronics S.r.l.
InventorsRuggero Anzalone, Nicolo Frazzetto, Aldo Raciti, Marco Antonio Salanitri, Giuseppe Abbondanza, Giuseppe D'Arrigo
Estimating the term…
Various embodiments provide a reaction chamber including a support, a receptacle, and a sponge. The support includes a plurality of bars that are spaced from each other by a plurality of openings. Each of the bars has side surfaces that are slanted or tilted downward such that melted material may readily flow through the openings. The support is covered with a coating of silicon carbide to prevent materials from adhering to the support. The receptacle underlies the support and is configured to collect any melted material that is drained through the openings of the support. The sponge is positioned in the receptacle and under the support. The sponge is configured to absorb any melted material that is collected by the receptacle.
An apparatus, comprising:
An apparatus, comprising:
A method, comprising:
Dependencies are inferred from the claim text.
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Apparatus for thermal treatment: mainly by convection
Carbides: silicon carbide
Characterised by the method used for supporting substrates in the reaction chamber: characterised by material of construction or surface finish of…
The substrate being supported substantially horizontally: elements in the interior of the support, e.g. electrodes, heating or cooling devices
About 10 years 11 months of term left · ends 2 Oct 2037 (estimated)
The present disclosure is directed to a reaction chamber for fabricating a silicon carbide wafer.
A semiconductor device includes various electronic components fabricated in a semiconductor substrate. Most semiconductor devices are fabricated in silicon (Si) wafers. Silicon carbide (SiC) wafers, however, have become increasing popular due, at least in part, to the chemical-physical properties of SiC. For example, compared to Si, SiC has a high band gap. As a result, a SiC wafer, even with a relatively small thickness, has a high breaking voltage compared to a Si wafer. Accordingly, SiC wafers are desirable for applications that have high voltages, such as power applications.
Silicon carbide may occur in a number of different chrystallographic structures or polytypes. The most common polytypes are the cubic polytype (3C polytype), the hexagonal polytype (4H and 6H polytypes), and the rhombohedric polytype (15R polytype).
FIG. 1 is a cross-sectional view of a reaction chamber according to one embodiment disclosed herein.
FIG. 2 is a perspective view of a support according to one embodiment disclosed herein.
FIG. 3 is a plan view of a support according to one embodiment disclosed herein.
In the following description, certain specific details are set forth in order to provide a thorough understanding of various embodiments of the disclosure. However, one skilled in the art will understand that the disclosure may be practiced without these specific details. In some instances, well-known details associated with reaction chambers and semiconductors have not been described to avoid obscuring the descriptions of the embodiments of the present disclosure.
Reference throughout this specification to “one embodiment” or “an embodiment” means that a particular feature, structure or characteristic described in connection with the embodiment is included in at least one embodiment. Thus, the appearances of the phrases “in one embodiment” or “in an embodiment” in various places throughout this specification are not necessarily all referring to the same embodiment. Furthermore, the particular features, structures, or characteristics may be combined in any suitable manner in one or more embodiments.
In the drawings, identical reference numbers identify similar features or elements. The size and relative positions of features in the drawings are not necessarily drawn to scale.