Apparatus and method for processing a semiconductor substrate

A method, comprising:

• placing a semiconductor substrate on a first curved surface of a first bending tool, the semiconductor substrate comprising a dielectric insulation layer, a first metallization layer and a second metallization layer, the dielectric insulation layer being disposed between the first and the second metallization layers;
• arranging a semiconductor body on the first metallization layer of the semiconductor substrate, with a contact layer arranged between the semiconductor body and the first metallization layer;
• using a second tool with a second surface to apply a first pressure to the semiconductor substrate and to the semiconductor body arranged on the semiconductor substrate, thereby pressing the semiconductor body onto the semiconductor substrate and the semiconductor substrate onto the first curved surface of the first bending tool, thereby joining the semiconductor body to the semiconductor substrate and pre-bending the semiconductor substrate with the semiconductor body mounted thereon;
• removing the pre-bended semiconductor substrate from the first tool;
• and
• after removing the pre-bended semiconductor substrate from the first tool, mounting the pre-bended semiconductor substrate to a bended base plate or heat sink, wherein mounting the pre-bended semiconductor substrate to the bended base plate or heat sink comprises:
• forming a first connection layer on the bended base plate or heat sink;
• and
• arranging the pre-bended semiconductor substrate with the semiconductor body mounted thereon on the first connection layer and joining the semiconductor substrate to the base plate or heat sink using a soldering process.