Heating method, film forming method, semiconductor device manufacturing method, and film forming apparatus

A film forming method for forming a high dielectric constant film on a substrate having a germanium film or a silicon germanium film formed on a surface of the substrate, the method comprising:

• loading the substrate kept in an air atmosphere at least a predetermined time into a processing container of a film forming apparatus;
• heating the substrate at least up to a film formation temperature in a state in which an interior of the processing container is kept in a hydrogen gas-containing atmosphere;
• and
• forming the high dielectric constant film on a surface of the germanium film or the silicon germanium film by supplying a film forming raw material gas for forming the high dielectric constant film and an oxidizing gas after the substrate has reached the film formation temperature.

A semiconductor device manufacturing method, comprising:

• forming a germanium film or a silicon germanium film on a semiconductor substrate via an insulating film;
• forming a high dielectric constant film on the germanium film or the silicon germanium film;
• forming a conductive film on the high dielectric constant film;
• and
• forming a channel portion comprising the germanium film or the silicon germanium film, a source electrode, a drain electrode, a gate insulating film comprising the high dielectric constant film, and a gate electrode comprising the conductive film, by etching the conductive film and the high dielectric constant film, and by implanting ions into the germanium film or the silicon germanium film,
• wherein after forming the germanium film or the silicon germanium film, the semiconductor substrate kept in an air atmosphere at least a predetermined time is loaded into a processing container of a film forming apparatus for forming the high dielectric constant film, and the semiconductor substrate is heated at least up to a film formation temperature in a state in which an interior of the processing container is kept in a hydrogen gas-containing atmosphere.