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US 10,475,663 B2Granted
Semiconductor device and method for manufacturing semiconductor device
AssigneeMitsubishi Electric Corporation
InventorKatsumi Nakamura
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Abstract
A semiconductor device of the present invention includes a substrate having a drift layer, metal wiring formed on an upper surface of the substrate, and an electrode formed on a back surface of the substrate, wherein the lifetime of carriers in the drift layer satisfies the following expression 1: [Expression 1] τ≥1.5×10−5exp(5.4×103tN-) expression 1 τ: the lifetime of carriers in the drift layer tN-: the layer thickness of the drift layer.
Claims3
A semiconductor device comprising:
- a substrate having a drift layer;
- metal wiring formed on an upper surface of the substrate;
- and
- an electrode formed on a back surface of the substrate,
- wherein the lifetime of carriers in the drift layer satisfies the following expression 1:
- [Expression 1]
- τ≥1.5×10−5 exp(5.4×103tN-) expression 1
- τ:
- the lifetime of carriers in the drift layer [sec]
- tN-:
- the layer thickness of the drift layer [m].
8 more elements
Dependencies are inferred from the claim text.