Semiconductor device including a capacitor structure and method for manufacturing the same

A method for manufacturing a semiconductor device, the method comprising:

• providing a substrate structure;
• forming a sacrificial layer and a supporter layer stacked sequentially on the substrate structure;
• forming a mask pattern on the supporter layer;
• forming a supporter pattern by etching the supporter layer using the mask pattern as an etch mask;
• forming the sacrificial pattern by etching the sacrificial layer using the supporter pattern as an etch mask;
• and
• removing the sacrificial pattern,
• wherein the mask pattern is removed during the process of forming the supporter pattern, and
• wherein, when the process of forming the sacrificial pattern is completed, the supporter pattern remains.

A method for manufacturing a semiconductor device, the method comprising:

• forming a first sacrificial layer, a first supporter layer, a second sacrificial layer and a plurality of second supporter patterns above a substrate;
• etching the first sacrificial layer, the first supporter layer and the second sacrificial layer by using the plurality of second supporter patterns as a mask to form a plurality of first sacrificial patterns, a plurality of first supporter patterns and a plurality of second sacrificial patterns, wherein a thickness of each of the second supporter patterns is reduced by the etching, and wherein the etching forms a plurality of recess regions between the plurality of first sacrificial patterns, the plurality of first supporter patterns, the plurality of second sacrificial patterns and the plurality of second supporter patterns;
• forming a capacitor in each of the recess regions of the plurality of recess regions, wherein the capacitor includes a first conductive pattern, a dielectric pattern on the first conductive pattern and a second conductive pattern on the dielectric pattern, and wherein at least two second supporter patterns of the plurality of second supporter patterns are positioned to support the capacitor formed in each of the recess regions;
• and
• removing the plurality of first sacrificial patterns and the plurality of second sacrificial patterns.