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US 10,475,656 B2Granted
Hydrosilylation in semiconductor processing
AssigneeMicron Technology, Inc.
InventorsMatthew S. Thorum, Gurtej S. Sandhu
Life of this patent
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Abstract
An example of forming semiconductor devices can include forming a silicon-hydrogen (Si—H) terminated surface on a silicon structure that includes patterned features by exposing the silicon structure to a hydrogen fluoride (HF) containing solution and performing a surface modification via hydrosilylation by exposing the Si—H terminated surface to an alkene and/or an alkyne.
Claims25
A method for forming a semiconductor device, comprising:
- forming a silicon-hydrogen (Si—H) terminated surface on a silicon structure that includes patterned features by exposing the silicon structure to a hydrogen fluoride (HF) containing solution;
- removing the HF containing solution via a deionized (DI) water rinse;
- forming a solvent on the Si—H terminated surface on the silicon structure;
- and
- performing a surface modification via hydrosilylation by exposing the Si—H terminated surface to an alkene and/or an alkyne.
2 more elements
A method for forming a semiconductor device, comprising:
- forming features on a silicon structure;
- performing a wet clean operation on the silicon structure to remove materials that remain on the silicon structure after forming the features on the silicon structure, wherein the wet clean operation includes exposing the silicon structure to a hydrogen fluoride (HF) containing solution;
- and
- performing a surface modification of the silicon structure via hydrosilylation by exposing the silicon structure to an alkene and/or an alkyne, wherein the alkene and/or alkyne displaces a solvent on the silicon structure.
1 more element
A method for forming a semiconductor device, comprising:
- performing a surface modification on a Si—H terminated surface of a silicon structure via hydrosilylation by reacting an alkene and/or an alkyne with the silicon structure, wherein performing the surface modification includes removing an HF containing solution from the Si—H terminated surface via a deionized (DI) water rinse and forming a solvent on the Si—H terminated surface on the silicon structure, wherein reacting the alkene and/or the alkyne with the silicon structure includes reacting a compound selected from the group comprising:
- a vinylbenzene;
- an ethynylbenzene;
- a vinyl and a silyl;
- an ethynyl and a silyl;
- and
- a fluorocarbon and a vinyl.
4 more elements
A semiconductor processing system, comprising:
- a first chamber configured to perform a wet clean operation on a silicon structure, wherein the wet clean operation removes materials that remain on the silicon structure after forming patterned features on the silicon structure and removes an HF containing solution from the silicon structure via a deionized (DI) water rinse and forms a solvent on the Si—H terminated surface on the silicon structure;
- and
- a second chamber configured to perform a surface modification of the silicon structure via hydrosilylation by exposing the silicon structure to an alkene and/or an alkyne.
Dependencies are inferred from the claim text.