Methods of fabricating ferroelectric memory devices
AssigneeSK hynix Inc.
InventorHyangkeun Yoo
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Abstract
A method of fabricating a ferroelectric memory device is provided. The method includes preparing a substrate, forming an interfacial insulation layer on the substrate, forming a ferroelectric layer on the interfacial insulation layer, applying a surface treatment process to the ferroelectric layer to form an oxygen vacancy region in the ferroelectric layer, forming a gate electrode layer on the ferroelectric layer, and annealing the ferroelectric layer to crystallize the ferroelectric layer.
Claims20
A method of fabricating a ferroelectric memory device, the method comprising:
- preparing a substrate;
- forming an interfacial insulation layer on the substrate;
- forming a ferroelectric layer directly on the interfacial insulation layer;
- applying a surface treatment process to the ferroelectric layer to form an oxygen vacancy region in the ferroelectric layer;
- creating an electric field across the ferroelectric layer;
- forming a gate electrode layer on the ferroelectric layer;
- and
- annealing the ferroelectric layer to crystallize the ferroelectric layer,
- wherein the oxygen vacancy region extends from a top surface of the ferroelectric layer into the bulk of the ferroelectric layer,
- wherein the thickness of the oxygen vacancy region is one-half the thickness of the ferroelectric layer, and
- wherein the oxygen vacancy region has a plurality of oxygen vacancies that act as positive charges.
A method of fabricating a ferroelectric memory device, the method comprising:
- preparing a substrate;
- forming an interfacial insulation layer on the substrate;
- forming a ferroelectric layer including a metal oxide material directly on the interfacial insulation layer;
- applying a surface treatment process to the ferroelectric layer to increase a concentration of oxygen vacancies in the metal oxide material;
- creating an electric field across the ferroelectric layer;
- forming a gate electrode layer on the ferroelectric layer;
- and
- annealing the ferroelectric layer to crystallize the ferroelectric layer using the gate electrode layer as a capping layer,
- wherein the concentration of oxygen vacancies is located in a portion of the ferroelectric layer from a top surface of the ferroelectric layer into the bulk of the ferroelectric layer,
- wherein the thickness of the portion of the ferroelectric layer with the concentration of oxygen vacancies is one-half the thickness of the ferroelectric layer, and
- wherein the concentration of oxygen vacancies act as positive charges.
Dependencies are inferred from the claim text.