Laser doping device and semiconductor device manufacturing method
AssigneesKyushu University, National University Corporation, Gigaphoton Inc.
InventorsHiroshi Ikenoue, Akira Suwa, Osamu Wakabayashi
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Abstract
A laser doping device includes: a solution supply system configured to supply a solution containing dopant to a doping region; a pulse laser system configured to output pulse laser light including a plurality of pulses, the pulse laser light transmitting through the solution; a first control unit configured to control a number of pulses of the pulse laser light for allowing the doping region to be irradiated, and to control a fluence of the pulse laser light in the doping region; and a second control unit configured to control a flow velocity of the solution so as to move bubbles, from the doping region, occurring in the solution every time of irradiation with the pulse.
Claims12
A laser doping device for doping polysilicon on a substrate with dopant, comprising:
- a solution supply system configured to supply a solution containing dopant to a doping region to be subjected to doping;
- a pulse laser system configured to output pulse laser light including a plurality of pulses, the pulse laser light transmitting through the solution and melting polysilicon in the doping region by allowing the doping region to be irradiated;
- an optical system configured to guide the pulse laser light output from the pulse laser system, to the doping region;
- a first control unit configured to control a number of pulses of the pulse laser light for allowing the doping region to be irradiated, and to control a fluence of the pulse laser light in the doping region;
- and
- a second control unit configured to control a flow velocity of the solution so as to move bubbles, from the doping region, occurring in the solution every time of irradiation with the pulse.
Dependencies are inferred from the claim text.