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US 10,475,646 B2Granted
Process for producing of polycrystalline silicon
AssigneeOci Company Ltd.
InventorsChang Ryol Kim, A Youn Cho, Ja Cheol Koo, Yong Chul Shin
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Abstract
The present invention relates to a process for producing of polycrystalline silicon, and the method includes (1) preparing a silicon-containing gas; (2) storing the silicon-containing gas in a storage tank; (3) depositing polycrystalline silicon by injecting the silicon-containing gas stored in the storage tank to a CVD reactor; (4) treating an off-gas emitted in the depositing step; and (5) injecting the gas treated in the treating step to the storage tank.
Claims20
A process for producing polycrystalline silicon, comprising:
- (1) preparing a silicon-containing gas;
- (2) storing the silicon-containing gas of step (1) in a storage tank, said storage tank including a mixture of materials that include trichlorosilane and dichlorosilane;
- (3) depositing polycrystalline silicon by injecting said mixture of materials stored in the storage tank to a CVD reactor;
- (4) treating an off-gas emitted in the depositing step (3) to a) separate out trichlorosilane and dichlorosilane from the off-gas and/or b) produce trichlorosilane from tetrachlorosilane in the off-gas;
- and
- (5) injecting the trichlorosilane and the dichlorosilane obtained from the off-gas treated in the treating step (4) to the storage tank.
3 more elements
A process for producing polycrystalline silicon, comprising:
- (1) providing a silicon-containing gas, said silicon-containing gas including greater than 90 vol. % trichlorosilane;
- (2) feeding said silicon-containing gas of step (1) into a storage tank and feeding a recovered silicon-containing gas into said storage tank, said storage tank including a mixture of materials that include trichlorosilane and dichlorosilane, at least a portion of said dichlorosilane in said storage tank is supplied from said recovered silicon-containing gas;
- (3) depositing polycrystalline silicon by injecting said a mixture of trichlorosilane and dichlorosilane stored in the storage tank to a CVD reactor;
- (4) treating an off-gas emitted in said depositing step (3) to form said recovered silicon-containing gas, said step of treating said off-gas including a) separating out trichlorosilane and dichlorosilane from said off-gas and/or b) producing trichlorosilane from tetrachlorosilane in said off-gas;
- and
- (5) providing at least a portion of said recovered silicon-containing gas obtained from said off-gas treated in said treating step (4) to said storage tank.
3 more elements
Dependencies are inferred from the claim text.