Method of filling recess and processing apparatus
AssigneeTokyo Electron Limited
InventorHiroki Murakami
Life of this patent
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Abstract
A method of filling a germanium film in a recess on a substrate to be processed having an insulating film on which the recess is formed on a surface of the substrate, includes forming a first germanium film so as to fill the recess by supplying a germanium raw material gas to the substrate, etching the first germanium film with an etching gas containing an excited H2 gas or NH3 gas, and forming a second germanium film on the first germanium film so as to fill the recess by supplying a germanium raw material gas.
Claims2
A method of filling a germanium film in a recess on a substrate to be processed having an insulating film on which the recess is formed on a surface of the substrate, comprising:
- forming a silicon film on a surface of the insulating film having the recess formed thereon;
- forming a first germanium film on the silicon film so as to fill the recess by supplying a germanium raw material gas to the substrate;
- etching the first germanium film with an etching gas containing an excited H2 gas or NH3 gas;
- and
- forming a second germanium film on the first germanium film so as to fill the recess by supplying a germanium raw material gas,
- wherein, in the act of etching, the first germanium film is selectively etched with respect to the insulating film and the silicon film.
A processing apparatus for filling a germanium film in a recess on a substrate to be processed having an insulating film on which the recess is formed on its surface, comprising:
- a process vessel configured to accommodate the substrate;
- a gas supply part configured to supply a predetermined gas into the process vessel;
- an excitation mechanism configured to excite the predetermined gas;
- a heating mechanism configured to heat the interior of the process vessel;
- an exhaust mechanism configured to exhaust the interior of the process vessel so as to be in a depressurized state;
- and
- a control part configured to control the gas supply part, the excitation mechanism, the heating mechanism, and the exhaust mechanism,
- wherein the control part is configured to:
- control the interior of the process vessel to be in a predetermined depressurized state by the exhaust mechanism, and control the interior of the process vessel to have a predetermined temperature by the heating mechanism;
- form a silicon film on a surface of the insulating film having the recess formed thereon;
- form a first germanium film on the silicon film so as to fill the recess by supplying a germanium raw material gas from the gas supply part into the process vessel;
- supply an etching gas containing an H2 gas or an NH3 gas from the gas supply part and excite the etching gas by the excitation mechanism;
- etch the first germanium film with the excited etching gas in the process vessel;
- and
- form a second germanium film on the first germanium film so as to fill the recess by supplying a germanium raw material gas from the gas supply part into the process vessel,
- wherein, in the act of etching, the first germanium film is selectively etched with respect to the insulating film and the silicon film.
Dependencies are inferred from the claim text.