Dielectric-metal stack for 3D flash memory application

A method for forming 3D memory devices in a processing chamber, the method comprising:

• (a) performing an oxide layer deposition process to form a first oxide layer on a substrate;
• (b) performing a tungsten layer deposition process to form a first tungsten layer on the first oxide layer;
• (c) performing a nitride adhesion layer deposition process to form a first nitride adhesion layer on the first tungsten layer;
• (d) performing the oxide layer deposition process to form a second oxide layer on the first nitride adhesion layer;
• (e) performing the tungsten layer deposition process to form a second tungsten layer on the second oxide layer;
• and
• (f) performing the nitride adhesion layer deposition process to form a second nitride adhesion layer on the second tungsten layer, wherein performing operations (a)-(f) forms a stack of a plurality of layers.

A method for forming 3D memory devices, the method comprising:

• positioning a substrate in a processing chamber;
• forming a stack of a plurality of layers on the substrate, the forming comprising:
• ionizing a first process gas to form an oxide layer,
• ionizing a second process gas to form a tungsten layer on the oxide layer;
• and
• ionizing a third process gas to form a tungsten nitride adhesion layer on the tungsten layer;
• and
• repeating the forming of the stack of the plurality of layers.