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US 10,475,643 B2Granted
Deposition apparatus and method for manufacturing semiconductor device using the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsRen-Hua Guo, Ju-Ru Hsieh, Jen-Hao Yang
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Abstract
A method for manufacturing a semiconductor device includes introducing a gas into a chamber from a showerhead. The chamber has a sidewall surrounding a pedestal. The temperature of the showerhead is increased. The showerhead is thermally connected to the sidewall of the chamber, and a temperature of the sidewall of the chamber is increased by increasing the temperature of the showerhead.
Claims20
A method for manufacturing a semiconductor device, comprising:
- introducing a gas into a chamber from a showerhead, wherein the chamber has a sidewall surrounding a pedestal;
- and
- increasing a temperature of the showerhead to, from about 70° C. to about 100° C., wherein the showerhead is thermally connected to the sidewall of the chamber, and a temperature of the sidewall of the chamber is increased by increasing the temperature of the showerhead.
A method for manufacturing a semiconductor device, comprising:
- forming a transistor on a substrate;
- introducing a gas into a chamber from a showerhead to deposit a contact etch stop layer (CESL) to cover the transistor and the substrate, wherein the chamber has a sidewall, the sidewall defines an accommodating space to accommodate the substrate, and the sidewall is thermally connected to the showerhead;
- and
- heating the thermally connected showerhead and sidewall.
1 more element
A method for manufacturing a semiconductor device, comprising:
- transferring a substrate having a transistor thereon into a chamber, wherein the chamber has a sidewall and a showerhead disposed above the substrate and thermally connected to the sidewall;
- performing a plasma treatment to the transistor and the substrate;
- heating the showerhead such that a temperature of the sidewall of the chamber is increased;
- and
- after heating the showerhead, depositing a film on the transistor and the substrate.
2 more elements
Dependencies are inferred from the claim text.