Doped and undoped vanadium oxides for low-k spacer applications
AssigneeApplied Materials, Inc.
InventorsEswaranand Venkatasubramanian, Srinivas Gandikota, Kelvin Chan, Atashi Basu, Abhijit Basu Mallick
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Abstract
A microelectronic device on a semiconductor substrate comprises: a gate electrode; and a spacer adjacent to the gate electrode, the spacer comprising: a the low-k dielectric film comprising one or more species of vanadium oxide, which is optionally doped, and an optional silicon nitride or oxide film. Methods comprise depositing a low-k dielectric film optionally sandwiched by a silicon nitride or oxide film to form a spacer adjacent to a gate electrode of a microelectronic device on a semiconductor substrate, wherein the low-k dielectric film comprises a vanadium-containing film.
Claims17
A microelectronic device on a semiconductor substrate, the microelectronic device comprising:
- a gate electrode with laterally opposite sidewalls;
- and
- a plurality of spacers, each spacer adjacent to a sidewall of the gate electrode, the spacers comprising a low-k dielectric film directly adjacent to the gate electrode, the low-k dielectric film comprising one or more species of vanadium oxide, which is optionally doped.
A microelectronic device on a semiconductor substrate, the microelectronic device comprising:
- a gate electrode with laterally opposite sidewalls;
- and
- a plurality of spacers, each spacer adjacent to a sidewall of the gate electrode, the spacers comprising a low-k dielectric film, the low-k dielectric film comprising one or more species of vanadium oxide, which is optionally doped,
- the spacer further comprising first and second films of silicon nitride or silicon oxide adjacent to the low-k dielectric film.
A microelectronic device on a semiconductor substrate, the microelectronic device comprising:
- a gate electrode with laterally opposite sidewalls;
- and
- a plurality of spacers, each spacer adjacent to a sidewall of the gate electrode, the spacers comprising a low-k dielectric film, the low-k dielectric film comprising one or more species of vanadium oxide, which is doped with one or more of the following dopants:
- carbon (C), nitrogen (N), silicon (Si), boron (B), or fluorine (F).
Dependencies are inferred from the claim text.